Etching Systems

PLASMA ETCHING SOLUTIONS FOR R&D AND MASS PRODUCTION

HUGE APPLICATION KNOW HOW ON III-V, Si and SiO2 , CONSTANT APPLICATION SUPPORT, FLEXIBILITY, BEST COO.

REACTIVE ION ETCHING SYSTEMS (RIE):

- RIE tools use medium density plasma, medium vacuum levels, and chlorine or fluorine chemistry to etch metals, silicon compounds, or III-V compound semiconductors.

General Information:

  • Fluorine and chlorine specification tools
  • Bench-top R&D, to cassette-to-cassette production tools
  • 100mm single wafer to ~600mm batch tools

Applications:

  • Failure analysis
  • Anisotropic of all types of silicon films (Si, SiO2, SiN)
  • Metal etching (Cr, Ti, Al, etc)
  • Compound semiconductor etching (GaAs, GaN, InP)

 

INDUCTIVELY COUPLED PLASMA ETCHERS (ICP-RIE):

- ICP-RIE tools use high density plasma, high vacuum levels, and chlorine or fluorine chemistry to etch metals, silicon compounds, or Compound semiconductors. SAMCO’s patented Tornado® ICP technology allows high selectivity, high rate, low damage etching with excellent anisotropy to be achieved.

General Information:

  • Features patented high density Tornado ICP® plasma source
  • Turbo molecular pumping systems for high vacuum processing
  • Chlorine and fluorine specifications
  • 100mm to 330mm sample stage specifications
  • Open load, load-locked, and cassette-to-cassette specifications

Applications:

  • Anisotropic of all types of silicon films (Si, SiO2, SiN, SiC)
  • Metal etching (Cr, Ti, Al, etc)
  • Compound semiconductor etching (GaAs, GaN, InP, InGaAsP, AlGaN etc)

DEEP REACTIVE ION ETCHING SYSTEMS (DRIE):

- DRIE tools use high density plasma, high vacuum levels, and fluorine chemistry to etch silicon and silicon compounds at high rates. For Silicon etching, SAMCO uses the “BOSCH Process” to perform high rate, deep, anisotropic etching. SAMCO has also developed special processes for high rate, deep etching of SiO2 and SiC.

General Information:

  • “BOSCH PROCESS” for high rate, deep anisotropic etching of silicon (up to 50um/min)
  • “TORNADO ICP®” for high rate SiO2 and SiC etching (~3.5um/min)
  • Turbo molecular pumping systems for high vacuum processing
  • 100mm to 300mm sample stage specifications
  • load-locked, and cassette-to-cassette specifications

Applications:

  • High rate etching of Silicon for MEMS
  • High rate etching of Silicon for TSV
  • High rate etching of SiC
  • High rate etching of SiO2
more info onGo to: SAMCO site

brochure RIE10NR

Brochure RIE200iP

Brchure RIE800iPB


Gallery