Calligarich: “A material set to redefine the present and future of electronics”
Florence will host a discussion on gallium nitride and the innovative technologies connected to it: from June 7 to 10, GaN Marathon 2026 will take place, the biennial workshop entirely dedicated to the potential of this remarkable material. In the Renaissance heart of the city, in a palace overlooking the Arno River, the University of Padua will welcome some of the most prominent names in the field. The event will be chaired by Professor Matteo Meneghini as General Chair and Professor Enrico Zanoni as Honorary Chair. They will greet a global elite of engineers, researchers, and high-tech companies involved in the development of GaN-based devices. Intensive technical sessions, a poster session, and dedicated networking opportunities will foster a high-level exchange of knowledge.
Among this year’s keynote speakers are Professor Hiroshi Amano, Nobel Laureate in Physics 2014 (Nagoya University), and Professor Umesh Mishra of UCSB, joined by over thirty invited speakers from institutions such as MIT, Stanford University, Cornell University, EPFL, IMEC, and leading industrial players including STMicroelectronics, Infineon, ams OSRAM, and Aixtron. Electron Mec will also be present among the exhibitors with its own stand.
How would you describe GaN Marathon in the international landscape of gallium nitride technologies?
“We are looking at an event of intentionally limited size, but with extraordinary scientific and industrial density. Every two years, GaN Marathon brings together the global community actively working on gallium nitride device development: a highly selected audience of top-level researchers and engineers, alongside some of the world’s most influential academic institutions and companies. This selectivity gives it a truly unique value. Participants attend to gain first-hand insights and engage directly with the leading figures behind technologies set to reshape entire industries. It is no coincidence that it is a highly anticipated event among all stakeholders in the sector.”
What are the advantages of GaN compared to silicon?
“Gallium nitride is a wide-bandgap semiconductor that offers superior performance over traditional silicon in several critical areas. Its high energy efficiency, excellent thermal management, and ability to operate at extremely high frequencies (even up to the terahertz range) make it ideal for many applications. These range from LEDs—where GaN has already revolutionized energy-efficient lighting—to power conversion for electric vehicles and data centers, as well as 5G telecommunications systems and avionics and defense applications. It is not a niche material: it is already present in mass-market products, and its relevance will grow significantly in the coming years, including alongside or replacing silicon in more demanding applications.”
What is Electron Mec’s role at GaN Marathon, and what does this presence represent for you?
“We could not miss it, because many of the GaN Marathon participants are our clients and partners: being there is a concrete confirmation of our commitment and our desire to be an active part of this technical and scientific community. Alongside Electron Mec, there will be highly specialized and internationally relevant partners such as SAMCO, Kanematsu, the U.S.-based VDI, Taiwan’s MPI, and Maury—highly specialized companies from all over the world that testify to the truly global stature of the sector. For those working in the GaN field, this is one of the key events where top-level insights are gathered and meaningful relationships are built.”